This compact unit brings together state-of-the-art skills in both power electronics, highly advanced thermal design, exotic materials, and microwave power engineering and is protected by eleven patents.
Two qGaN modules are needed inside a VFD to handle each of the three input phases. Modules will be available for evaluation later this year followed by commercial volumes.
We are designing a reference VFD unit that will clearly demonstrate all the benefits of our amazing, breakthrough technologies on our test bench. A copy of this reference design will be available for customers to enable them to fast-track the creation of their own new VFDs based on our QPT innovations.
Our first qGaN module (Q650V15A-M01) will handle 15A RMS current driving 380V three phase motors. Our roadmap will have qGaN modules to handle various different power loads to suit different application area requirements.
OVERVIEW OF THE QGaN MODULE
Integrates qDrive with the fastest switching 650V GaN transistors – achieves sub 2ns Tr/Tf (ultra low hard switching loses)
Fully isolated and tolerant of the >500V/ns dV/dt that switching at this speed generates
World-leading Tjc– unique, proprietary thermal design ensures Tj remains low even at the full power switching capacity of the transistors, running at up to 2MHz
Employs proprietary packaging and RF interconnect technology within the module so that systems designers don’t have to!
Proprietary WhisperGaN construction technology makes system EMC qualification a breeze
Gives designers the best of both worlds – the greatest efficiency and power density that GaN promises, without the signal integrity, RF and thermal challenges that other GaN solutions present.